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DD1200S12H4HOSA1 Datasheet

DD1200S12H4HOSA1 Cover
DatasheetDD1200S12H4HOSA1
File Size598.36 KB
Total Pages7
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 2 part numbers
Associated Parts DD1200S12H4HOSA1, DD1200S12H4
Description MOD DIODE 1200A IHMB130-2, DIODE MODULE 1200V 1200A

DD1200S12H4HOSA1 - Infineon Technologies

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URL Link

DD1200S12H4HOSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

-

Configuration

2 Independent

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

1200A

Power - Max

1200000W

Vce(on) (Max) @ Vge, Ic

2.35V @ 15V, 1200A

Current - Collector Cutoff (Max)

-

Input Capacitance (Cies) @ Vce

-

Input

Standard

NTC Thermistor

No

Operating Temperature

-40°C ~ 150°C

Mounting Type

Chassis Mount

Package / Case

Module

Supplier Device Package

Module

DD1200S12H4

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

Diode Configuration

2 Independent

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

1200V

Current - Average Rectified (Io) (per Diode)

-

Voltage - Forward (Vf) (Max) @ If

2.35V @ 1200A

Speed

Standard Recovery >500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

475A @ 600V

Operating Temperature - Junction

-40°C ~ 150°C

Mounting Type

Chassis Mount

Package / Case

Module

Supplier Device Package

AG-IHMB130-2