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| Datasheet | CTLDM8002A-M621H TR |
| File Size | 985.1 KB |
| Total Pages | 5 |
| Manufacturer | Central Semiconductor Corp |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | CTLDM8002A-M621H TR, CTLDM8002A-M621H BK |
| Description | MOSFET N-CH 50V DFN6, MOSFET N-CH 50V DFN6 |
CTLDM8002A-M621H TR - Central Semiconductor Corp
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Manufacturer Central Semiconductor Corp Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 50V Current - Continuous Drain (Id) @ 25°C 280mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Rds On (Max) @ Id, Vgs 2.5Ohm @ 500mA, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 0.72nC @ 4.5V Vgs (Max) 20V Input Capacitance (Ciss) (Max) @ Vds 70pF @ 25V FET Feature - Power Dissipation (Max) 1.6W (Ta) Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TLM621H Package / Case 6-XFDFN Exposed Pad |
Manufacturer Central Semiconductor Corp Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 50V Current - Continuous Drain (Id) @ 25°C 280mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Rds On (Max) @ Id, Vgs 2.5Ohm @ 500mA, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 0.72nC @ 4.5V Vgs (Max) 20V Input Capacitance (Ciss) (Max) @ Vds 70pF @ 25V FET Feature - Power Dissipation (Max) 1.6W (Ta) Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TLM621H Package / Case 6-XFDFN Exposed Pad |