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BYV30JT-600PQ Datasheet

BYV30JT-600PQ Cover
DatasheetBYV30JT-600PQ
File Size270.11 KB
Total Pages10
ManufacturerWeEn Semiconductors
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts BYV30JT-600PQ
Description DIODE GEN PURP 600V 30A TO-3P

BYV30JT-600PQ - WeEn Semiconductors

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URL Link

BYV30JT-600PQ

WeEn Semiconductors

Manufacturer

WeEn Semiconductors

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

600V

Current - Average Rectified (Io)

30A

Voltage - Forward (Vf) (Max) @ If

1.8V @ 30A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

65ns

Current - Reverse Leakage @ Vr

10µA @ 600V

Capacitance @ Vr, F

-

Mounting Type

Through Hole

Package / Case

TO-3P-3, SC-65-3

Supplier Device Package

TO-3P

Operating Temperature - Junction

175°C (Max)