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BYC58X-600 Datasheet

BYC58X-600,127 Cover
DatasheetBYC58X-600,127
File Size353.79 KB
Total Pages10
ManufacturerWeEn Semiconductors
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts BYC58X-600,127
Description DIODE GEN PURP 600V 8A TO220F

BYC58X-600,127 - WeEn Semiconductors

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BYC58X-600,127 BYC58X-600,127 WeEn Semiconductors DIODE GEN PURP 600V 8A TO220F 414

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BYC58X-600,127

WeEn Semiconductors

Manufacturer

WeEn Semiconductors

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

600V

Current - Average Rectified (Io)

8A

Voltage - Forward (Vf) (Max) @ If

3.2V @ 8A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

12.5ns

Current - Reverse Leakage @ Vr

150µA @ 600V

Capacitance @ Vr, F

-

Mounting Type

Through Hole

Package / Case

TO-220-2 Full Pack, Isolated Tab

Supplier Device Package

TO-220FP

Operating Temperature - Junction

150°C (Max)