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| Datasheet | BUK961R4-30E,118 |
| File Size | 514.71 KB |
| Total Pages | 15 |
| Manufacturer | NXP |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | BUK961R4-30E,118 |
| Description | MOSFET N-CH 30V 120A D2PAK |
BUK961R4-30E,118 - NXP
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BUK961R4-30E,118 | NXP | MOSFET N-CH 30V 120A D2PAK | 191 More on Order |
URL Link
www.oemstron.com/datasheet/BUK961R4-30E,118
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Manufacturer NXP USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 120A (Tc) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Rds On (Max) @ Id, Vgs 1.4mOhm @ 25A, 5V Vgs(th) (Max) @ Id 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs 113nC @ 5V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 16150pF @ 25V FET Feature - Power Dissipation (Max) 357W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |