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BUK761R3-30E Datasheet

BUK761R3-30E,118 Cover
DatasheetBUK761R3-30E,118
File Size511.4 KB
Total Pages15
ManufacturerNXP
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts BUK761R3-30E,118
Description MOSFET N-CH 30V 120A D2PAK

BUK761R3-30E,118 - NXP

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BUK761R3-30E,118 BUK761R3-30E,118 NXP MOSFET N-CH 30V 120A D2PAK 248

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URL Link

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

120A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.3mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

154nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

11960pF @ 25V

FET Feature

-

Power Dissipation (Max)

357W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB