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BUK652R3-40C Datasheet

BUK652R3-40C,127 Cover
DatasheetBUK652R3-40C,127
File Size496.11 KB
Total Pages16
ManufacturerNXP
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts BUK652R3-40C,127
Description MOSFET N-CH 40V 120A TO220AB

BUK652R3-40C,127 - NXP

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BUK652R3-40C,127 BUK652R3-40C,127 NXP MOSFET N-CH 40V 120A TO220AB 333

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URL Link

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

120A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

2.3mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

2.8V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

260nC @ 10V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

15100pF @ 25V

FET Feature

-

Power Dissipation (Max)

306W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3