Contact Us
TELEPHONE86-755-85220304-805
E-MAILsales@oemstron.com
SKYPEAylin@oemstron.com
QQ2881674027
MessageLeave Your Message
Top

BSP89L6327HTSA1 Datasheet

BSP89L6327HTSA1 Cover
DatasheetBSP89L6327HTSA1
File Size582.65 KB
Total Pages8
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 2 part numbers
Associated Parts BSP89L6327HTSA1, BSP89 E6327
Description MOSFET N-CH 240V 350MA SOT-223, MOSFET N-CH 240V 350MA SOT-223

BSP89L6327HTSA1 - Infineon Technologies

BSP89L6327HTSA1 Datasheet Page 1
BSP89L6327HTSA1 Datasheet Page 2
BSP89L6327HTSA1 Datasheet Page 3
BSP89L6327HTSA1 Datasheet Page 4
BSP89L6327HTSA1 Datasheet Page 5
BSP89L6327HTSA1 Datasheet Page 6
BSP89L6327HTSA1 Datasheet Page 7
BSP89L6327HTSA1 Datasheet Page 8

The Products You May Be Interested In

BSP89L6327HTSA1 BSP89L6327HTSA1 Infineon Technologies MOSFET N-CH 240V 350MA SOT-223 174

More on Order

BSP89 E6327 BSP89 E6327 Infineon Technologies MOSFET N-CH 240V 350MA SOT-223 384

More on Order

URL Link

BSP89L6327HTSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

SIPMOS®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

240V

Current - Continuous Drain (Id) @ 25°C

350mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

6Ohm @ 350mA, 10V

Vgs(th) (Max) @ Id

1.8V @ 108µA

Gate Charge (Qg) (Max) @ Vgs

6.4nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

140pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.8W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-SOT223-4

Package / Case

TO-261-4, TO-261AA

BSP89 E6327

Infineon Technologies

Manufacturer

Infineon Technologies

Series

SIPMOS®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

240V

Current - Continuous Drain (Id) @ 25°C

350mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

6Ohm @ 350mA, 10V

Vgs(th) (Max) @ Id

1.8V @ 108µA

Gate Charge (Qg) (Max) @ Vgs

6.4nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

140pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.8W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-SOT223-4

Package / Case

TO-261-4, TO-261AA