Support
sales@oemstron.com
86-755-83232896
English$ USD
Contact Us
TELEPHONE86-755-83232896
E-MAILsales@oemstron.com
SKYPEcondy@oemstron.com
QQ2881672436
MessageLeave Your Message
Top

BSP321PL6327HTSA1 Datasheet

BSP321PL6327HTSA1 Cover
DatasheetBSP321PL6327HTSA1
File Size532.54 KB
Total Pages9
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 1 part numbers
Associated Parts BSP321PL6327HTSA1
Description MOSFET P-CH 100V 0.98A SOT-223

BSP321PL6327HTSA1 - Infineon Technologies

BSP321PL6327HTSA1 Datasheet Page 1
BSP321PL6327HTSA1 Datasheet Page 2
BSP321PL6327HTSA1 Datasheet Page 3
BSP321PL6327HTSA1 Datasheet Page 4
BSP321PL6327HTSA1 Datasheet Page 5
BSP321PL6327HTSA1 Datasheet Page 6
BSP321PL6327HTSA1 Datasheet Page 7
BSP321PL6327HTSA1 Datasheet Page 8
BSP321PL6327HTSA1 Datasheet Page 9

The Products You May Be Interested In

BSP321PL6327HTSA1 BSP321PL6327HTSA1 Infineon Technologies MOSFET P-CH 100V 0.98A SOT-223 153

More on Order

URL Link

BSP321PL6327HTSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

SIPMOS®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

980mA (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

900mOhm @ 980mA, 10V

Vgs(th) (Max) @ Id

4V @ 380µA

Gate Charge (Qg) (Max) @ Vgs

12nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

319pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.8W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-SOT223-4

Package / Case

TO-261-4, TO-261AA