Support
sales@oemstron.com
86-755-83232896
English$ USD
Contact Us
TELEPHONE86-755-83232896
E-MAILsales@oemstron.com
SKYPEcondy@oemstron.com
QQ2881672436
MessageLeave Your Message
Top

BSP299L6327HUSA1 Datasheet

BSP299L6327HUSA1 Cover
DatasheetBSP299L6327HUSA1
File Size318.29 KB
Total Pages10
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 2 part numbers
Associated Parts BSP299L6327HUSA1, BSP299 E6327
Description MOSFET N-CH 500V 400MA SOT-223, MOSFET N-CH 500V 400MA SOT-223

BSP299L6327HUSA1 - Infineon Technologies

BSP299L6327HUSA1 Datasheet Page 1
BSP299L6327HUSA1 Datasheet Page 2
BSP299L6327HUSA1 Datasheet Page 3
BSP299L6327HUSA1 Datasheet Page 4
BSP299L6327HUSA1 Datasheet Page 5
BSP299L6327HUSA1 Datasheet Page 6
BSP299L6327HUSA1 Datasheet Page 7
BSP299L6327HUSA1 Datasheet Page 8
BSP299L6327HUSA1 Datasheet Page 9
BSP299L6327HUSA1 Datasheet Page 10

The Products You May Be Interested In

BSP299L6327HUSA1 BSP299L6327HUSA1 Infineon Technologies MOSFET N-CH 500V 400MA SOT-223 341

More on Order

BSP299 E6327 BSP299 E6327 Infineon Technologies MOSFET N-CH 500V 400MA SOT-223 140

More on Order

URL Link

BSP299L6327HUSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

SIPMOS®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

400mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4Ohm @ 400mA, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

400pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.8W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-SOT223-4

Package / Case

TO-261-4, TO-261AA

BSP299 E6327

Infineon Technologies

Manufacturer

Infineon Technologies

Series

SIPMOS®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

400mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4Ohm @ 400mA, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

400pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.8W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-SOT223-4

Package / Case

TO-261-4, TO-261AA