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| Datasheet | BSO211PNTMA1 |
| File Size | 81.22 KB |
| Total Pages | 8 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | BSO211PNTMA1 |
| Description | MOSFET 2P-CH 20V 4.7A 8SOIC |
BSO211PNTMA1 - Infineon Technologies
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URL Link
www.oemstron.com/datasheet/BSO211PNTMA1
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Manufacturer Infineon Technologies Series OptiMOS™ FET Type 2 P-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 4.7A Rds On (Max) @ Id, Vgs 67mOhm @ 4.7A, 4.5V Vgs(th) (Max) @ Id 1.2V @ 25µA Gate Charge (Qg) (Max) @ Vgs 23.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 920pF @ 15V Power - Max 2W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package P-DSO-8 |