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| Datasheet | BSM75GB170DN2HOSA1 |
| File Size | 308.41 KB |
| Total Pages | 10 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | BSM75GB170DN2HOSA1 |
| Description | IGBT 1700V 110A 625W MODULE |
BSM75GB170DN2HOSA1 - Infineon Technologies
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URL Link
www.oemstron.com/datasheet/BSM75GB170DN2HOSA1
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Manufacturer Infineon Technologies Series - IGBT Type - Configuration Half Bridge Voltage - Collector Emitter Breakdown (Max) 1700V Current - Collector (Ic) (Max) 110A Power - Max 625W Vce(on) (Max) @ Vge, Ic 3.9V @ 15V, 75A Current - Collector Cutoff (Max) - Input Capacitance (Cies) @ Vce 11nF @ 25V Input Standard NTC Thermistor No Operating Temperature 150°C (TJ) Mounting Type Chassis Mount Package / Case Module Supplier Device Package Module |