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BSH205G2VL Datasheet

BSH205G2VL Cover
DatasheetBSH205G2VL
File Size737.25 KB
Total Pages16
ManufacturerNexperia
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts BSH205G2VL, BSH205G2R
Description MOSFET P-CH 20V 2.3A TO236AB, MOSFET P-CH 20V 2A SOT23

BSH205G2VL - Nexperia

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URL Link

BSH205G2VL

Nexperia

Manufacturer

Nexperia USA Inc.

Series

Automotive, AEC-Q101

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

2.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

170mOhm @ 2A, 4.5V

Vgs(th) (Max) @ Id

950mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

6.5nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

418pF @ 10V

FET Feature

-

Power Dissipation (Max)

480mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-236AB

Package / Case

TO-236-3, SC-59, SOT-23-3

BSH205G2R

Nexperia

Manufacturer

Nexperia USA Inc.

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V

Rds On (Max) @ Id, Vgs

170mOhm @ 2A, 4.5V

Vgs(th) (Max) @ Id

950mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

6.5nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

418pF @ 10V

FET Feature

-

Power Dissipation (Max)

480mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-236AB

Package / Case

TO-236-3, SC-59, SOT-23-3