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BSH202 Datasheet

BSH202,215 Cover
DatasheetBSH202,215
File Size225.11 KB
Total Pages8
ManufacturerNexperia
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts BSH202,215
Description MOSFET P-CH 30V 520MA SOT23

BSH202,215 - Nexperia

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BSH202,215 BSH202,215 Nexperia MOSFET P-CH 30V 520MA SOT23 19872

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URL Link

BSH202,215

Nexperia

Manufacturer

Nexperia USA Inc.

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

520mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

900mOhm @ 280mA, 10V

Vgs(th) (Max) @ Id

1.9V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

2.9nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

80pF @ 24V

FET Feature

-

Power Dissipation (Max)

417mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-236AB

Package / Case

TO-236-3, SC-59, SOT-23-3