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| Datasheet | BSC883N03MSGATMA1 |
| File Size | 679.25 KB |
| Total Pages | 10 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | BSC883N03MSGATMA1 |
| Description | MOSFET N-CH 34V 19A TDSON-8 |
BSC883N03MSGATMA1 - Infineon Technologies
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URL Link
www.oemstron.com/datasheet/BSC883N03MSGATMA1
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Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 34V Current - Continuous Drain (Id) @ 25°C 19A (Ta), 98A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 3.8mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 41nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3200pF @ 15V FET Feature - Power Dissipation (Max) 2.5W (Ta), 57W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TDSON-8-1 Package / Case 8-PowerTDFN |