Support
sales@oemstron.com
86-755-83232896
English$ USD
Contact Us
TELEPHONE86-755-83232896
E-MAILsales@oemstron.com
SKYPEcondy@oemstron.com
QQ2881672436
MessageLeave Your Message
Top

BSC012N06NSATMA1 Datasheet

BSC012N06NSATMA1 Cover
DatasheetBSC012N06NSATMA1
File Size836.01 KB
Total Pages11
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 1 part numbers
Associated Parts BSC012N06NSATMA1
Description TRENCH 40<-<100V

BSC012N06NSATMA1 - Infineon Technologies

BSC012N06NSATMA1 Datasheet Page 1
BSC012N06NSATMA1 Datasheet Page 2
BSC012N06NSATMA1 Datasheet Page 3
BSC012N06NSATMA1 Datasheet Page 4
BSC012N06NSATMA1 Datasheet Page 5
BSC012N06NSATMA1 Datasheet Page 6
BSC012N06NSATMA1 Datasheet Page 7
BSC012N06NSATMA1 Datasheet Page 8
BSC012N06NSATMA1 Datasheet Page 9
BSC012N06NSATMA1 Datasheet Page 10
BSC012N06NSATMA1 Datasheet Page 11

The Products You May Be Interested In

BSC012N06NSATMA1 BSC012N06NSATMA1 Infineon Technologies TRENCH 40<-<100V 259

More on Order

URL Link

BSC012N06NSATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

100A

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

1.2mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

3.3V @ 147µA

Gate Charge (Qg) (Max) @ Vgs

143nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

11000pF @ 30V

FET Feature

-

Power Dissipation (Max)

214W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TSON-8-3

Package / Case

8-PowerTDFN