Support
sales@oemstron.com
86-755-83232896
English$ USD
Contact Us
TELEPHONE86-755-83232896
E-MAILsales@oemstron.com
SKYPEcondy@oemstron.com
QQ2881672436
MessageLeave Your Message
Top

BSB019N03LX G Datasheet

BSB019N03LX G Cover
DatasheetBSB019N03LX G
File Size548.29 KB
Total Pages11
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 1 part numbers
Associated Parts BSB019N03LX G
Description MOSFET N-CH 30V 174A 2WDSON

BSB019N03LX G - Infineon Technologies

BSB019N03LX G Datasheet Page 1
BSB019N03LX G Datasheet Page 2
BSB019N03LX G Datasheet Page 3
BSB019N03LX G Datasheet Page 4
BSB019N03LX G Datasheet Page 5
BSB019N03LX G Datasheet Page 6
BSB019N03LX G Datasheet Page 7
BSB019N03LX G Datasheet Page 8
BSB019N03LX G Datasheet Page 9
BSB019N03LX G Datasheet Page 10
BSB019N03LX G Datasheet Page 11

The Products You May Be Interested In

BSB019N03LX G BSB019N03LX G Infineon Technologies MOSFET N-CH 30V 174A 2WDSON 321

More on Order

URL Link

BSB019N03LX G

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

32A (Ta), 174A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

1.9mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

92nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

8400pF @ 15V

FET Feature

-

Power Dissipation (Max)

2.8W (Ta), 89W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

MG-WDSON-2, CanPAK M™

Package / Case

3-WDSON