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BSB012NE2LX Datasheet

BSB012NE2LX Cover
DatasheetBSB012NE2LX
File Size1,445.56 KB
Total Pages13
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 1 part numbers
Associated Parts BSB012NE2LX
Description MOSFET N-CH 25V 170A WDSON-2

BSB012NE2LX - Infineon Technologies

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URL Link

BSB012NE2LX

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

37A (Ta), 170A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

1.2mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

67nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4900pF @ 12V

FET Feature

-

Power Dissipation (Max)

2.8W (Ta), 57W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

MG-WDSON-2, CanPAK M™

Package / Case

3-WDSON