Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | BS7067N06LS3G |
| File Size | 483.96 KB |
| Total Pages | 9 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | BS7067N06LS3G |
| Description | MOSFET N-CH 60V 20A TSDSON-8 |
BS7067N06LS3G - Infineon Technologies
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URL Link
www.oemstron.com/datasheet/BS7067N06LS3G
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Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 14A (Ta), 20A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 6.7mOhm @ 20A, 10V Vgs(th) (Max) @ Id 2.2V @ 35µA Gate Charge (Qg) (Max) @ Vgs 62nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4800pF @ 30V FET Feature - Power Dissipation (Max) 2.1W (Ta), 78W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TSDSON-8 Package / Case 8-PowerVDFN |