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BCR573E6327HTSA1 Datasheet

BCR573E6327HTSA1 Cover
DatasheetBCR573E6327HTSA1
File Size525.8 KB
Total Pages6
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 2 part numbers
Associated Parts BCR573E6327HTSA1, BCR573E6433HTMA1
Description TRANS PREBIAS PNP 0.33W SOT23-3, TRANS PREBIAS PNP 300MW SOT23-3

BCR573E6327HTSA1 - Infineon Technologies

BCR573E6327HTSA1 Datasheet Page 1
BCR573E6327HTSA1 Datasheet Page 2
BCR573E6327HTSA1 Datasheet Page 3
BCR573E6327HTSA1 Datasheet Page 4
BCR573E6327HTSA1 Datasheet Page 5
BCR573E6327HTSA1 Datasheet Page 6

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URL Link

BCR573E6327HTSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

Transistor Type

PNP - Pre-Biased

Current - Collector (Ic) (Max)

500mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

1 kOhms

Resistor - Emitter Base (R2)

10 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

70 @ 50mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 2.5mA, 50mA

Current - Collector Cutoff (Max)

100nA (ICBO)

Frequency - Transition

150MHz

Power - Max

330mW

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

SOT-23-3

BCR573E6433HTMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

Transistor Type

PNP - Pre-Biased

Current - Collector (Ic) (Max)

500mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

1 kOhms

Resistor - Emitter Base (R2)

10 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

70 @ 50mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 2.5mA, 50mA

Current - Collector Cutoff (Max)

100nA (ICBO)

Frequency - Transition

150MHz

Power - Max

330mW

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

SOT-23-3