![BCR191WE6327HTSA1 Cover](http://media.oemstron.com/oemstron/datasheet/sm/bcr191we6327htsa1-0001.jpg)
Datasheet | BCR191WE6327HTSA1 |
File Size | 836.27 KB |
Total Pages | 8 |
Manufacturer | Infineon Technologies |
Website | https://www.infineon.com |
Total Parts | This datasheet covers 4 part numbers |
Associated Parts | BCR191WE6327HTSA1, BCR 191F E6327, BCR191WH6327XTSA1, BCR191E6327HTSA1 |
Description | TRANS PREBIAS PNP 250MW SOT323-3, TRANS PREBIAS PNP 250MW TSFP-3, TRANS PREBIAS PNP 250MW SOT323-3, TRANS PREBIAS PNP 0.2W SOT23-3 |
BCR191WE6327HTSA1 - Infineon Technologies
![BCR191WE6327HTSA1 Datasheet Page 1](http://media.oemstron.com/oemstron/datasheet/sm/bcr191we6327htsa1-0001.jpg)
![BCR191WE6327HTSA1 Datasheet Page 2](http://media.oemstron.com/oemstron/datasheet/sm/bcr191we6327htsa1-0002.jpg)
![BCR191WE6327HTSA1 Datasheet Page 3](http://media.oemstron.com/oemstron/datasheet/sm/bcr191we6327htsa1-0003.jpg)
![BCR191WE6327HTSA1 Datasheet Page 4](http://media.oemstron.com/oemstron/datasheet/sm/bcr191we6327htsa1-0004.jpg)
![BCR191WE6327HTSA1 Datasheet Page 5](http://media.oemstron.com/oemstron/datasheet/sm/bcr191we6327htsa1-0005.jpg)
![BCR191WE6327HTSA1 Datasheet Page 6](http://media.oemstron.com/oemstron/datasheet/sm/bcr191we6327htsa1-0006.jpg)
![BCR191WE6327HTSA1 Datasheet Page 7](http://media.oemstron.com/oemstron/datasheet/sm/bcr191we6327htsa1-0007.jpg)
![BCR191WE6327HTSA1 Datasheet Page 8](http://media.oemstron.com/oemstron/datasheet/sm/bcr191we6327htsa1-0008.jpg)
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URL Link
Manufacturer Infineon Technologies Series - Transistor Type PNP - Pre-Biased Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 22 kOhms Resistor - Emitter Base (R2) 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) 100nA (ICBO) Frequency - Transition 200MHz Power - Max 250mW Mounting Type Surface Mount Package / Case SC-70, SOT-323 Supplier Device Package PG-SOT323-3 |
Manufacturer Infineon Technologies Series - Transistor Type PNP - Pre-Biased Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 22 kOhms Resistor - Emitter Base (R2) 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) 100nA (ICBO) Frequency - Transition 200MHz Power - Max 250mW Mounting Type Surface Mount Package / Case SOT-723 Supplier Device Package PG-TSFP-3 |
Manufacturer Infineon Technologies Series - Transistor Type PNP - Pre-Biased Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 22 kOhms Resistor - Emitter Base (R2) 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) 100nA (ICBO) Frequency - Transition 200MHz Power - Max 250mW Mounting Type Surface Mount Package / Case SC-70, SOT-323 Supplier Device Package PG-SOT323-3 |
Manufacturer Infineon Technologies Series - Transistor Type PNP - Pre-Biased Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 22 kOhms Resistor - Emitter Base (R2) 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) 100nA (ICBO) Frequency - Transition 200MHz Power - Max 200mW Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23-3 |