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BCR142WE6327HTSA1 Datasheet

BCR142WE6327HTSA1 Cover
DatasheetBCR142WE6327HTSA1
File Size836.83 KB
Total Pages8
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 5 part numbers
Associated Parts BCR142WE6327HTSA1, BCR 142F E6327, BCR142B6327HTLA1, BCR142WH6327XTSA1, BCR142E6327HTSA1
Description TRANS PREBIAS NPN 250MW SOT323-3, TRANS PREBIAS NPN 250MW TSFP-3, TRANS PREBIAS NPN 200MW SOT23-3, TRANS PREBIAS NPN 250MW SOT323-3, TRANS PREBIAS NPN 0.2W SOT23-3

BCR142WE6327HTSA1 - Infineon Technologies

BCR142WE6327HTSA1 Datasheet Page 1
BCR142WE6327HTSA1 Datasheet Page 2
BCR142WE6327HTSA1 Datasheet Page 3
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BCR142WE6327HTSA1 Datasheet Page 6
BCR142WE6327HTSA1 Datasheet Page 7
BCR142WE6327HTSA1 Datasheet Page 8

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URL Link

BCR142WE6327HTSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

22 kOhms

Resistor - Emitter Base (R2)

47 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

70 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

100nA (ICBO)

Frequency - Transition

150MHz

Power - Max

250mW

Mounting Type

Surface Mount

Package / Case

SC-70, SOT-323

Supplier Device Package

PG-SOT323-3

BCR 142F E6327

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

22 kOhms

Resistor - Emitter Base (R2)

47 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

70 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

100nA (ICBO)

Frequency - Transition

150MHz

Power - Max

250mW

Mounting Type

Surface Mount

Package / Case

SOT-723

Supplier Device Package

PG-TSFP-3

BCR142B6327HTLA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

22 kOhms

Resistor - Emitter Base (R2)

47 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

70 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

100nA (ICBO)

Frequency - Transition

150MHz

Power - Max

200mW

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

SOT-23-3

BCR142WH6327XTSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

22 kOhms

Resistor - Emitter Base (R2)

47 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

70 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

100nA (ICBO)

Frequency - Transition

150MHz

Power - Max

250mW

Mounting Type

Surface Mount

Package / Case

SC-70, SOT-323

Supplier Device Package

PG-SOT323-3

BCR142E6327HTSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

22 kOhms

Resistor - Emitter Base (R2)

47 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

70 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

100nA (ICBO)

Frequency - Transition

150MHz

Power - Max

200mW

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

SOT-23-3