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BC373ZL1G Datasheet

BC373ZL1G Cover
DatasheetBC373ZL1G
File Size53.49 KB
Total Pages4
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 5 part numbers
Associated Parts BC373ZL1G, BC373ZL1, BC373G, BC373, BC372
Description TRANS NPN DARL 80V 1A TO-92, TRANS NPN DARL 80V 1A TO-92, TRANS NPN DARL 80V 1A TO-92, TRANS NPN DARL 80V 1A TO-92, TRANS NPN DARL 100V 1A TO-92

BC373ZL1G - ON Semiconductor

BC373ZL1G Datasheet Page 1
BC373ZL1G Datasheet Page 2
BC373ZL1G Datasheet Page 3
BC373ZL1G Datasheet Page 4

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URL Link

BC373ZL1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN - Darlington

Current - Collector (Ic) (Max)

1A

Voltage - Collector Emitter Breakdown (Max)

80V

Vce Saturation (Max) @ Ib, Ic

1.1V @ 250µA, 250mA

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

10000 @ 100mA, 5V

Power - Max

625mW

Frequency - Transition

200MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

BC373ZL1

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN - Darlington

Current - Collector (Ic) (Max)

1A

Voltage - Collector Emitter Breakdown (Max)

80V

Vce Saturation (Max) @ Ib, Ic

1.1V @ 250µA, 250mA

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

10000 @ 100mA, 5V

Power - Max

625mW

Frequency - Transition

200MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

BC373G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN - Darlington

Current - Collector (Ic) (Max)

1A

Voltage - Collector Emitter Breakdown (Max)

80V

Vce Saturation (Max) @ Ib, Ic

1.1V @ 250µA, 250mA

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

10000 @ 100mA, 5V

Power - Max

625mW

Frequency - Transition

200MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

Supplier Device Package

TO-92-3

BC373

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN - Darlington

Current - Collector (Ic) (Max)

1A

Voltage - Collector Emitter Breakdown (Max)

80V

Vce Saturation (Max) @ Ib, Ic

1.1V @ 250µA, 250mA

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

10000 @ 100mA, 5V

Power - Max

625mW

Frequency - Transition

200MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

Supplier Device Package

TO-92-3

BC372

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN - Darlington

Current - Collector (Ic) (Max)

1A

Voltage - Collector Emitter Breakdown (Max)

100V

Vce Saturation (Max) @ Ib, Ic

1.1V @ 250µA, 250mA

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

10000 @ 100mA, 5V

Power - Max

625mW

Frequency - Transition

200MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

Supplier Device Package

TO-92-3