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BBS3002-DL-E Datasheet

BBS3002-DL-E Cover
DatasheetBBS3002-DL-E
File Size265.57 KB
Total Pages6
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 3 part numbers
Associated Parts BBS3002-DL-E, BBS3002-TL-1E, BBS3002-DL-1E
Description MOSFET P-CH 60V 100A SMP-FD, MOSFET P-CH 60V 100A, MOSFET P-CH 60V 100A D2PAK

BBS3002-DL-E - ON Semiconductor

BBS3002-DL-E Datasheet Page 1
BBS3002-DL-E Datasheet Page 2
BBS3002-DL-E Datasheet Page 3
BBS3002-DL-E Datasheet Page 4
BBS3002-DL-E Datasheet Page 5
BBS3002-DL-E Datasheet Page 6

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BBS3002-DL-E BBS3002-DL-E ON Semiconductor MOSFET P-CH 60V 100A SMP-FD 168

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BBS3002-TL-1E BBS3002-TL-1E ON Semiconductor MOSFET P-CH 60V 100A 2530

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BBS3002-DL-1E BBS3002-DL-1E ON Semiconductor MOSFET P-CH 60V 100A D2PAK 7801

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URL Link

BBS3002-DL-E

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

100A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

5.8mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

280nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

13200pF @ 20V

FET Feature

-

Power Dissipation (Max)

90W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SMP-FD

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

BBS3002-TL-1E

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

100A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

5.8mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

280nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

13200pF @ 20V

FET Feature

-

Power Dissipation (Max)

90W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D²PAK (TO-263)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

BBS3002-DL-1E

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

100A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

5.8mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

280nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

13200pF @ 20V

FET Feature

-

Power Dissipation (Max)

90W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D²PAK (TO-263)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB