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| Datasheet | AUIRF3808S |
| File Size | 674.31 KB |
| Total Pages | 11 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | AUIRF3808S |
| Description | MOSFET N-CH 75V 106A D2PAK |
AUIRF3808S - Infineon Technologies
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AUIRF3808S | Infineon Technologies | MOSFET N-CH 75V 106A D2PAK | 492 More on Order |
URL Link
www.oemstron.com/datasheet/AUIRF3808S
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Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 75V Current - Continuous Drain (Id) @ 25°C 106A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 7mOhm @ 82A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 220nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 5310pF @ 25V FET Feature - Power Dissipation (Max) 200W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |