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| Datasheet | APTM120U10DAG |
| File Size | 216.66 KB |
| Total Pages | 6 |
| Manufacturer | Microsemi |
| Website | https://www.microsemi.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | APTM120U10DAG |
| Description | MOSFET N-CH 1200V 116A SP6 |
APTM120U10DAG - Microsemi
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URL Link
www.oemstron.com/datasheet/APTM120U10DAG
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Manufacturer Microsemi Corporation Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1200V Current - Continuous Drain (Id) @ 25°C 160A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 120mOhm @ 58A, 10V Vgs(th) (Max) @ Id 5V @ 20mA Gate Charge (Qg) (Max) @ Vgs 1100nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 28900pF @ 25V FET Feature - Power Dissipation (Max) 3290W (Tc) Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount Supplier Device Package SP6 Package / Case SP6 |