Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | APTM100DA18T1G |
| File Size | 145.13 KB |
| Total Pages | 5 |
| Manufacturer | Microsemi |
| Website | https://www.microsemi.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | APTM100DA18T1G |
| Description | MOSFET N-CH 1000V 40A SP1 |
APTM100DA18T1G - Microsemi
The Products You May Be Interested In
 |
APTM100DA18T1G | Microsemi | MOSFET N-CH 1000V 40A SP1 | 204 More on Order |
URL Link
www.oemstron.com/datasheet/APTM100DA18T1G
|
Manufacturer Microsemi Corporation Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1000V Current - Continuous Drain (Id) @ 25°C 40A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 216mOhm @ 33A, 10V Vgs(th) (Max) @ Id 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs 570nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 14800pF @ 25V FET Feature - Power Dissipation (Max) 657W (Tc) Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount Supplier Device Package SP1 Package / Case SP1 |