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APT20F50S Datasheet

APT20F50S Cover
DatasheetAPT20F50S
File Size132.13 KB
Total Pages4
ManufacturerMicrosemi
Websitehttps://www.microsemi.com/
Total PartsThis datasheet covers 2 part numbers
Associated Parts APT20F50S, APT20F50B
Description MOSFET N-CH 500V 20A D3PAK, MOSFET N-CH 500V 20A TO-247

APT20F50S - Microsemi

APT20F50S Datasheet Page 1
APT20F50S Datasheet Page 2
APT20F50S Datasheet Page 3
APT20F50S Datasheet Page 4

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URL Link

APT20F50S

Microsemi

Manufacturer

Microsemi Corporation

Series

POWER MOS 8™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

20A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

300mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

5V @ 500µA

Gate Charge (Qg) (Max) @ Vgs

75nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2950pF @ 25V

FET Feature

-

Power Dissipation (Max)

290W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D3Pak

Package / Case

TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

APT20F50B

Microsemi

Manufacturer

Microsemi Corporation

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

20A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

300mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

5V @ 500µA

Gate Charge (Qg) (Max) @ Vgs

75nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2950pF @ 25V

FET Feature

-

Power Dissipation (Max)

290W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247 [B]

Package / Case

TO-247-3