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APT11GP60BDQBG Datasheet

APT11GP60BDQBG Cover
DatasheetAPT11GP60BDQBG
File Size212.91 KB
Total Pages7
ManufacturerMicrosemi
Websitehttps://www.microsemi.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts APT11GP60BDQBG
Description IGBT 600V 41A 187W TO247

APT11GP60BDQBG - Microsemi

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URL Link

APT11GP60BDQBG

Microsemi

Manufacturer

Microsemi Corporation

Series

POWER MOS 7®

IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

41A

Current - Collector Pulsed (Icm)

45A

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 11A

Power - Max

187W

Switching Energy

46µJ (on), 90µJ (off)

Input Type

Standard

Gate Charge

40nC

Td (on/off) @ 25°C

7ns/29ns

Test Condition

400V, 11A, 5Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247-3