Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | AOTF11C60P_001 |
| File Size | 454.45 KB |
| Total Pages | 6 |
| Manufacturer | Alpha & Omega Semiconductor |
| Website | |
| Total Parts | This datasheet covers 3 part numbers |
| Associated Parts | AOTF11C60P_001, AOTF11C60PL, AOTF11C60P |
| Description | MOSFET N-CH 600V 11A TO220F, MOSFET N-CH 600V 11A, MOSFET N-CH |
AOTF11C60P_001 - Alpha & Omega Semiconductor
The Products You May Be Interested In
 |
AOTF11C60P_001 | Alpha & Omega Semiconductor | MOSFET N-CH 600V 11A TO220F | 353 More on Order |
 |
AOTF11C60PL | Alpha & Omega Semiconductor | MOSFET N-CH 600V 11A | 245 More on Order |
 |
AOTF11C60P | Alpha & Omega Semiconductor | MOSFET N-CH | 312 More on Order |
URL Link
|
Manufacturer Alpha & Omega Semiconductor Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 11A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 400mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 2333pF @ 100V FET Feature - Power Dissipation (Max) 50W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220F Package / Case TO-220-3 Full Pack |
Manufacturer Alpha & Omega Semiconductor Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 11A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 400mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 2333pF @ 100V FET Feature - Power Dissipation (Max) 37W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3F Package / Case TO-220-3 Full Pack |
Manufacturer Alpha & Omega Semiconductor Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 11A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 400mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 2333pF @ 100V FET Feature - Power Dissipation (Max) 50W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3F Package / Case TO-220-3 Full Pack |