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| Datasheet | AOT11S65L |
| File Size | 299.88 KB |
| Total Pages | 7 |
| Manufacturer | Alpha & Omega Semiconductor |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | AOT11S65L |
| Description | MOSFET N-CH 650V 11A TO220 |
AOT11S65L - Alpha & Omega Semiconductor
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AOT11S65L | Alpha & Omega Semiconductor | MOSFET N-CH 650V 11A TO220 | 441 More on Order |
URL Link
www.oemstron.com/datasheet/AOT11S65L
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Manufacturer Alpha & Omega Semiconductor Inc. Series aMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 11A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 399mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 13.2nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 646pF @ 100V FET Feature - Power Dissipation (Max) 198W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220 Package / Case TO-220-3 |