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AONR21357 Datasheet

AONR21357 Cover
DatasheetAONR21357
File Size524.96 KB
Total Pages6
ManufacturerAlpha & Omega Semiconductor
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts AONR21357
Description MOSFET P-CH 30V 3X3 8DFN EP

AONR21357 - Alpha & Omega Semiconductor

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URL Link

AONR21357

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

21A (Ta), 34A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

7.8mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

70nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

2830pF @ 15V

FET Feature

-

Power Dissipation (Max)

5W (Ta), 30W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-DFN-EP (3x3)

Package / Case

8-PowerVDFN