Contact Us
TELEPHONE86-755-85220304-805
E-MAILsales@oemstron.com
SKYPEAylin@oemstron.com
QQ2881674027
MessageLeave Your Message
Top

AO4435L_101 Datasheet

AO4435L_101 Cover
DatasheetAO4435L_101
File Size390.76 KB
Total Pages11
ManufacturerAlpha & Omega Semiconductor
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts AO4435L_101, AO4435_201
Description MOSFET P-CH, MOSFET P-CH 30V 10.5A 8SOIC

AO4435L_101 - Alpha & Omega Semiconductor

AO4435L_101 Datasheet Page 1
AO4435L_101 Datasheet Page 2
AO4435L_101 Datasheet Page 3
AO4435L_101 Datasheet Page 4
AO4435L_101 Datasheet Page 5
AO4435L_101 Datasheet Page 6
AO4435L_101 Datasheet Page 7
AO4435L_101 Datasheet Page 8
AO4435L_101 Datasheet Page 9
AO4435L_101 Datasheet Page 10
AO4435L_101 Datasheet Page 11

The Products You May Be Interested In

AO4435L_101 AO4435L_101 Alpha & Omega Semiconductor MOSFET P-CH 476

More on Order

AO4435_201 AO4435_201 Alpha & Omega Semiconductor MOSFET P-CH 30V 10.5A 8SOIC 148

More on Order

URL Link

AO4435L_101

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

10.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

5V, 20V

Rds On (Max) @ Id, Vgs

14mOhm @ 11A, 20V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

24nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

1400pF @ 15V

FET Feature

-

Power Dissipation (Max)

3.1W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOIC

Package / Case

8-SOIC (0.154", 3.90mm Width)

AO4435_201

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

10.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

5V, 20V

Rds On (Max) @ Id, Vgs

14mOhm @ 11A, 20V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

24nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

1400pF @ 15V

FET Feature

-

Power Dissipation (Max)

3.1W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOIC

Package / Case

8-SOIC (0.154", 3.90mm Width)