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| Datasheet | ALD210808ASCL |
| File Size | 113.6 KB |
| Total Pages | 12 |
| Manufacturer | Advanced Linear Devices Inc. |
| Website | |
| Total Parts | This datasheet covers 4 part numbers |
| Associated Parts | ALD210808ASCL, ALD210808APCL, ALD210808PCL, ALD210808SCL |
| Description | MOSFET 4N-CH 10.6V 0.08A 16SOIC, MOSFET 4N-CH 10.6V 0.08A 16DIP, MOSFET 4N-CH 10.6V 0.08A 16DIP, MOSFET 4N-CH 10.6V 0.08A 16SOIC |
ALD210808ASCL - Advanced Linear Devices Inc.
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Manufacturer Advanced Linear Devices Inc. Series EPAD®, Zero Threshold™ FET Type 4 N-Channel, Matched Pair FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 10.6V Current - Continuous Drain (Id) @ 25°C 80mA Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id 20mV @ 10µA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds - Power - Max 500mW Operating Temperature 0°C ~ 70°C (TJ) Mounting Type Surface Mount Package / Case 16-SOIC (0.154", 3.90mm Width) Supplier Device Package 16-SOIC |
Manufacturer Advanced Linear Devices Inc. Series EPAD®, Zero Threshold™ FET Type 4 N-Channel, Matched Pair FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 10.6V Current - Continuous Drain (Id) @ 25°C 80mA Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id 20mV @ 10µA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds - Power - Max 500mW Operating Temperature 0°C ~ 70°C (TJ) Mounting Type Through Hole Package / Case 16-DIP (0.300", 7.62mm) Supplier Device Package 16-PDIP |
Manufacturer Advanced Linear Devices Inc. Series EPAD®, Zero Threshold™ FET Type 4 N-Channel, Matched Pair FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 10.6V Current - Continuous Drain (Id) @ 25°C 80mA Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id 20mV @ 10µA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds - Power - Max 500mW Operating Temperature 0°C ~ 70°C (TJ) Mounting Type Through Hole Package / Case 16-DIP (0.300", 7.62mm) Supplier Device Package 16-PDIP |
Manufacturer Advanced Linear Devices Inc. Series EPAD®, Zero Threshold™ FET Type 4 N-Channel, Matched Pair FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 10.6V Current - Continuous Drain (Id) @ 25°C 80mA Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id 20mV @ 10µA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds - Power - Max 500mW Operating Temperature 0°C ~ 70°C (TJ) Mounting Type Surface Mount Package / Case 16-SOIC (0.154", 3.90mm Width) Supplier Device Package 16-SOIC |