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3LP01C-TB-E Datasheet

3LP01C-TB-E Cover
Datasheet3LP01C-TB-E
File Size253.58 KB
Total Pages6
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 2 part numbers
Associated Parts 3LP01C-TB-E, 3LP01C-TB-H
Description MOSFET P-CH 30V 100MA CP, MOSFET P-CH 30V 100MA CP

3LP01C-TB-E - ON Semiconductor

3LP01C-TB-E Datasheet Page 1
3LP01C-TB-E Datasheet Page 2
3LP01C-TB-E Datasheet Page 3
3LP01C-TB-E Datasheet Page 4
3LP01C-TB-E Datasheet Page 5
3LP01C-TB-E Datasheet Page 6

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3LP01C-TB-H 3LP01C-TB-H ON Semiconductor MOSFET P-CH 30V 100MA CP 117

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URL Link

3LP01C-TB-E

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

100mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4V

Rds On (Max) @ Id, Vgs

10.4Ohm @ 50mA, 4V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

1.43nC @ 10V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

7.5pF @ 10V

FET Feature

-

Power Dissipation (Max)

250mW (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

3-CP

Package / Case

TO-236-3, SC-59, SOT-23-3

3LP01C-TB-H

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

100mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4V

Rds On (Max) @ Id, Vgs

10.4Ohm @ 50mA, 4V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

1.43nC @ 10V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

7.5pF @ 10V

FET Feature

-

Power Dissipation (Max)

250mW (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

3-CP

Package / Case

TO-236-3, SC-59, SOT-23-3