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2SK4125-1EX Datasheet

2SK4125-1EX Cover
Datasheet2SK4125-1EX
File Size282.8 KB
Total Pages7
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 3 part numbers
Associated Parts 2SK4125-1EX, 2SK4125-1E, 2SK4125
Description MOSFET N-CH 600V 17A TO3P, MOSFET N-CH 600V 17A, MOSFET N-CH 600V 17A TO-3PB

2SK4125-1EX - ON Semiconductor

2SK4125-1EX Datasheet Page 1
2SK4125-1EX Datasheet Page 2
2SK4125-1EX Datasheet Page 3
2SK4125-1EX Datasheet Page 4
2SK4125-1EX Datasheet Page 5
2SK4125-1EX Datasheet Page 6
2SK4125-1EX Datasheet Page 7

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URL Link

2SK4125-1EX

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

17A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

610mOhm @ 7A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

46nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1200pF @ 30V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 170W (Tc)

Operating Temperature

150°C (TA)

Mounting Type

Through Hole

Supplier Device Package

TO-3P-3L

Package / Case

TO-3P-3, SC-65-3

2SK4125-1E

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

17A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

610mOhm @ 7A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

46nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1200pF @ 30V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 170W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3P-3L

Package / Case

TO-3P-3, SC-65-3

2SK4125

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

17A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

610mOhm @ 7A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

46nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1200pF @ 30V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 170W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3PB

Package / Case

TO-3P-3, SC-65-3