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2SK3703 Datasheet

2SK3703 Cover
Datasheet2SK3703
File Size254.96 KB
Total Pages7
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 2 part numbers
Associated Parts 2SK3703, 2SK3703-1E
Description MOSFET N-CH 60V 30A TO-220ML, MOSFET N-CH 60V 30A

2SK3703 - ON Semiconductor

2SK3703 Datasheet Page 1
2SK3703 Datasheet Page 2
2SK3703 Datasheet Page 3
2SK3703 Datasheet Page 4
2SK3703 Datasheet Page 5
2SK3703 Datasheet Page 6
2SK3703 Datasheet Page 7

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URL Link

2SK3703

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

30A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

26mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

40nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1780pF @ 20V

FET Feature

-

Power Dissipation (Max)

2W (Ta), 25W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220ML

Package / Case

TO-220-3 Full Pack

2SK3703-1E

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

30A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

26mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

40nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1780pF @ 20V

FET Feature

-

Power Dissipation (Max)

2W (Ta), 25W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220F-3SG

Package / Case

TO-220-3 Full Pack