Contact Us
TELEPHONE86-755-85220304-805
E-MAILsales@oemstron.com
SKYPEAylin@oemstron.com
QQ2881674027
MessageLeave Your Message
Top

2SK3670 Datasheet

2SK3670,F(M Cover
Datasheet2SK3670,F(M
File Size146.62 KB
Total Pages3
ManufacturerToshiba Semiconductor and Storage
Websitehttp://www.toshiba.com/taec/
Total PartsThis datasheet covers 5 part numbers
Associated Parts 2SK3670,F(M, 2SK3670,F(J, 2SK3670(T6CANO,F,M, 2SK3670(T6CANO,A,F, 2SK3670(F,M)
Description MOSFET N-CH, MOSFET N-CH, MOSFET N-CH, MOSFET N-CH, MOSFET N-CH

2SK3670,F(M - Toshiba Semiconductor and Storage

2SK3670 Datasheet Page 1
2SK3670 Datasheet Page 2
2SK3670 Datasheet Page 3

The Products You May Be Interested In

2SK3670,F(M 2SK3670,F(M Toshiba Semiconductor and Storage MOSFET N-CH 195

More on Order

2SK3670,F(J 2SK3670,F(J Toshiba Semiconductor and Storage MOSFET N-CH 260

More on Order

2SK3670(T6CANO,F,M 2SK3670(T6CANO,F,M Toshiba Semiconductor and Storage MOSFET N-CH 255

More on Order

2SK3670(T6CANO,A,F 2SK3670(T6CANO,A,F Toshiba Semiconductor and Storage MOSFET N-CH 485

More on Order

2SK3670(F,M) 2SK3670(F,M) Toshiba Semiconductor and Storage MOSFET N-CH 322

More on Order

URL Link

2SK3670,F(M

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

Through Hole

Supplier Device Package

TO-92MOD

Package / Case

TO-226-3, TO-92-3 Long Body

2SK3670,F(J

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

Through Hole

Supplier Device Package

TO-92MOD

Package / Case

TO-226-3, TO-92-3 Long Body

2SK3670(T6CANO,F,M

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

Through Hole

Supplier Device Package

TO-92MOD

Package / Case

TO-226-3, TO-92-3 Long Body

2SK3670(T6CANO,A,F

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

Through Hole

Supplier Device Package

TO-92MOD

Package / Case

TO-226-3, TO-92-3 Long Body

2SK3670(F,M)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

Through Hole

Supplier Device Package

TO-92MOD

Package / Case

TO-226-3, TO-92-3 Long Body