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2SK3666-2-TB-E Datasheet

2SK3666-2-TB-E Cover
Datasheet2SK3666-2-TB-E
File Size1,007.98 KB
Total Pages4
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 2 part numbers
Associated Parts 2SK3666-2-TB-E, 2SK3666-3-TB-E
Description JFET NCH 30V 200MW 3CP, JFET N-CH 10MA 200MW 3CP

2SK3666-2-TB-E - ON Semiconductor

2SK3666-2-TB-E Datasheet Page 1
2SK3666-2-TB-E Datasheet Page 2
2SK3666-2-TB-E Datasheet Page 3
2SK3666-2-TB-E Datasheet Page 4

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2SK3666-3-TB-E 2SK3666-3-TB-E ON Semiconductor JFET N-CH 10MA 200MW 3CP 387

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URL Link

2SK3666-2-TB-E

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Voltage - Breakdown (V(BR)GSS)

-

Drain to Source Voltage (Vdss)

30V

Current - Drain (Idss) @ Vds (Vgs=0)

600µA @ 10V

Current Drain (Id) - Max

10mA

Voltage - Cutoff (VGS off) @ Id

180mV @ 1µA

Input Capacitance (Ciss) (Max) @ Vds

4pF @ 10V

Resistance - RDS(On)

200 Ohms

Power - Max

200mW

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

3-CP

2SK3666-3-TB-E

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Voltage - Breakdown (V(BR)GSS)

-

Drain to Source Voltage (Vdss)

30V

Current - Drain (Idss) @ Vds (Vgs=0)

1.2mA @ 10V

Current Drain (Id) - Max

10mA

Voltage - Cutoff (VGS off) @ Id

180mV @ 1µA

Input Capacitance (Ciss) (Max) @ Vds

4pF @ 10V

Resistance - RDS(On)

200 Ohms

Power - Max

200mW

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

3-CP