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| Datasheet | 2SK2221-E |
| File Size | 85.12 KB |
| Total Pages | 8 |
| Manufacturer | Renesas Electronics America |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | 2SK2221-E |
| Description | MOSFET N-CH 200V 8A TO-3P |
2SK2221-E - Renesas Electronics America
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2SK2221-E | Renesas Electronics America | MOSFET N-CH 200V 8A TO-3P | 452 More on Order |
URL Link
www.oemstron.com/datasheet/2SK2221-E
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Manufacturer Renesas Electronics America Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 8A (Ta) Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 600pF @ 10V FET Feature - Power Dissipation (Max) 100W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-3P Package / Case TO-3P-3, SC-65-3 |