Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | 2SK1859-E |
| File Size | 95.44 KB |
| Total Pages | 9 |
| Manufacturer | Renesas Electronics America |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | 2SK1859-E |
| Description | MOSFET N-CH 900V 6A TO-3P |
2SK1859-E - Renesas Electronics America
The Products You May Be Interested In
 |
2SK1859-E | Renesas Electronics America | MOSFET N-CH 900V 6A TO-3P | 211 More on Order |
URL Link
www.oemstron.com/datasheet/2SK1859-E
|
Manufacturer Renesas Electronics America Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 900V Current - Continuous Drain (Id) @ 25°C 6A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 3Ohm @ 3A, 10V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 980pF @ 10V FET Feature - Power Dissipation (Max) 60W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-3P Package / Case TO-3P-3, SC-65-3 |