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2SJ656 Datasheet

2SJ656 Cover
Datasheet2SJ656
File Size46.69 KB
Total Pages4
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts 2SJ656
Description MOSFET P-CH 100V 18A TO-220ML

2SJ656 - ON Semiconductor

2SJ656 Datasheet Page 1
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URL Link

2SJ656

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

18A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

75.5mOhm @ 9A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

74nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4200pF @ 20V

FET Feature

-

Power Dissipation (Max)

2W (Ta), 30W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220ML

Package / Case

TO-220-3 Full Pack