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2SD2206A(T6SEP Datasheet

2SD2206A(T6SEP,F,M Cover
Datasheet2SD2206A(T6SEP,F,M
File Size154.16 KB
Total Pages4
ManufacturerToshiba Semiconductor and Storage
Websitehttp://www.toshiba.com/taec/
Total PartsThis datasheet covers 5 part numbers
Associated Parts 2SD2206A(T6SEP,F,M, 2SD2206,T6F(J, 2SD2206(TE6,F,M), 2SD2206(T6CNO,A,F), 2SD2206(T6CANO,F,M
Description TRANS NPN 2A 120V TO226-3, TRANS NPN 2A 100V TO226-3, TRANS NPN 2A 100V TO226-3, TRANS NPN 2A 100V TO226-3, TRANS NPN 2A 100V TO226-3

2SD2206A(T6SEP,F,M - Toshiba Semiconductor and Storage

2SD2206A(T6SEP Datasheet Page 1
2SD2206A(T6SEP Datasheet Page 2
2SD2206A(T6SEP Datasheet Page 3
2SD2206A(T6SEP Datasheet Page 4

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2SD2206(TE6,F,M) 2SD2206(TE6,F,M) Toshiba Semiconductor and Storage TRANS NPN 2A 100V TO226-3 377

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2SD2206(T6CANO,F,M 2SD2206(T6CANO,F,M Toshiba Semiconductor and Storage TRANS NPN 2A 100V TO226-3 302

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URL Link

2SD2206A(T6SEP,F,M

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

2A

Voltage - Collector Emitter Breakdown (Max)

120V

Vce Saturation (Max) @ Ib, Ic

1.5V @ 1mA, 1A

Current - Collector Cutoff (Max)

-

DC Current Gain (hFE) (Min) @ Ic, Vce

2000 @ 1A, 2V

Power - Max

900mW

Frequency - Transition

-

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 Long Body

Supplier Device Package

TO-92MOD

2SD2206,T6F(J

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

2A

Voltage - Collector Emitter Breakdown (Max)

100V

Vce Saturation (Max) @ Ib, Ic

1.5V @ 1mA, 1A

Current - Collector Cutoff (Max)

10µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

2000 @ 1A, 2V

Power - Max

900mW

Frequency - Transition

100MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 Long Body

Supplier Device Package

TO-92MOD

2SD2206(TE6,F,M)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

2A

Voltage - Collector Emitter Breakdown (Max)

100V

Vce Saturation (Max) @ Ib, Ic

1.5V @ 1mA, 1A

Current - Collector Cutoff (Max)

10µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

2000 @ 1A, 2V

Power - Max

900mW

Frequency - Transition

100MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 Long Body

Supplier Device Package

TO-92MOD

2SD2206(T6CNO,A,F)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

2A

Voltage - Collector Emitter Breakdown (Max)

100V

Vce Saturation (Max) @ Ib, Ic

1.5V @ 1mA, 1A

Current - Collector Cutoff (Max)

10µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

2000 @ 1A, 2V

Power - Max

900mW

Frequency - Transition

100MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 Long Body

Supplier Device Package

TO-92MOD

2SD2206(T6CANO,F,M

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

2A

Voltage - Collector Emitter Breakdown (Max)

100V

Vce Saturation (Max) @ Ib, Ic

1.5V @ 1mA, 1A

Current - Collector Cutoff (Max)

10µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

2000 @ 1A, 2V

Power - Max

900mW

Frequency - Transition

100MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 Long Body

Supplier Device Package

TO-92MOD