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2SB1495 Datasheet

2SB1495,Q(M Cover
Datasheet2SB1495,Q(M
File Size156.84 KB
Total Pages4
ManufacturerToshiba Semiconductor and Storage
Websitehttp://www.toshiba.com/taec/
Total PartsThis datasheet covers 2 part numbers
Associated Parts 2SB1495,Q(M, 2SB1495,Q(J
Description TRANS PNP 3A 100V TO220-3, TRANS PNP 3A 100V TO220-3

2SB1495,Q(M - Toshiba Semiconductor and Storage

2SB1495 Datasheet Page 1
2SB1495 Datasheet Page 2
2SB1495 Datasheet Page 3
2SB1495 Datasheet Page 4

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2SB1495,Q(M 2SB1495,Q(M Toshiba Semiconductor and Storage TRANS PNP 3A 100V TO220-3 415

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2SB1495,Q(J 2SB1495,Q(J Toshiba Semiconductor and Storage TRANS PNP 3A 100V TO220-3 453

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URL Link

2SB1495,Q(M

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

3A

Voltage - Collector Emitter Breakdown (Max)

100V

Vce Saturation (Max) @ Ib, Ic

1.5V @ 1.5mA, 1.5A

Current - Collector Cutoff (Max)

10µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

2000 @ 2A, 2V

Power - Max

2W

Frequency - Transition

-

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Supplier Device Package

TO-220NIS

2SB1495,Q(J

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

3A

Voltage - Collector Emitter Breakdown (Max)

100V

Vce Saturation (Max) @ Ib, Ic

1.5V @ 1.5mA, 1.5A

Current - Collector Cutoff (Max)

10µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

2000 @ 2A, 2V

Power - Max

2W

Frequency - Transition

-

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Supplier Device Package

TO-220NIS