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| Datasheet | 2SA949-Y,ONK-1F(M |
| File Size | 130.14 KB |
| Total Pages | 4 |
| Manufacturer | Toshiba Semiconductor and Storage |
| Website | http://www.toshiba.com/taec/ |
| Total Parts | This datasheet covers 9 part numbers |
| Associated Parts | 2SA949-Y,ONK-1F(M, 2SA949-Y,ONK-1F(J, 2SA949-Y,F(J, 2SA949-Y(TE6,F,M), 2SA949-Y(T6SHRP,FM, 2SA949-Y(T6ONK1,FM, 2SA949-Y(T6JVC1,FM, 2SA949-Y(JVC1,F,M), 2SA949-O(TE6,F,M) |
| Description | TRANS PNP 50MA 150V TO226-3, TRANS PNP 50MA 150V TO226-3, TRANS PNP 50MA 150V TO226-3, TRANS PNP 50MA 150V TO226-3, TRANS PNP 50MA 150V TO226-3 |
2SA949-Y,ONK-1F(M - Toshiba Semiconductor and Storage
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Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type PNP Current - Collector (Ic) (Max) 50mA Voltage - Collector Emitter Breakdown (Max) 150V Vce Saturation (Max) @ Ib, Ic 800mV @ 1mA, 10A Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 10mA, 5V Power - Max 800mW Frequency - Transition 120MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 Long Body Supplier Device Package TO-92MOD |
Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type PNP Current - Collector (Ic) (Max) 50mA Voltage - Collector Emitter Breakdown (Max) 150V Vce Saturation (Max) @ Ib, Ic 800mV @ 1mA, 10A Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 10mA, 5V Power - Max 800mW Frequency - Transition 120MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 Long Body Supplier Device Package TO-92MOD |
Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type PNP Current - Collector (Ic) (Max) 50mA Voltage - Collector Emitter Breakdown (Max) 150V Vce Saturation (Max) @ Ib, Ic 800mV @ 1mA, 10A Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 10mA, 5V Power - Max 800mW Frequency - Transition 120MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 Long Body Supplier Device Package TO-92MOD |
Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type PNP Current - Collector (Ic) (Max) 50mA Voltage - Collector Emitter Breakdown (Max) 150V Vce Saturation (Max) @ Ib, Ic 800mV @ 1mA, 10A Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 10mA, 5V Power - Max 800mW Frequency - Transition 120MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 Long Body Supplier Device Package TO-92MOD |
Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type PNP Current - Collector (Ic) (Max) 50mA Voltage - Collector Emitter Breakdown (Max) 150V Vce Saturation (Max) @ Ib, Ic 800mV @ 1mA, 10A Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 10mA, 5V Power - Max 800mW Frequency - Transition 120MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 Long Body Supplier Device Package TO-92MOD |
Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type PNP Current - Collector (Ic) (Max) 50mA Voltage - Collector Emitter Breakdown (Max) 150V Vce Saturation (Max) @ Ib, Ic 800mV @ 1mA, 10A Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 10mA, 5V Power - Max 800mW Frequency - Transition 120MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 Long Body Supplier Device Package TO-92MOD |
Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type PNP Current - Collector (Ic) (Max) 50mA Voltage - Collector Emitter Breakdown (Max) 150V Vce Saturation (Max) @ Ib, Ic 800mV @ 1mA, 10A Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 10mA, 5V Power - Max 800mW Frequency - Transition 120MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 Long Body Supplier Device Package TO-92MOD |
Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type PNP Current - Collector (Ic) (Max) 50mA Voltage - Collector Emitter Breakdown (Max) 150V Vce Saturation (Max) @ Ib, Ic 800mV @ 1mA, 10A Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 10mA, 5V Power - Max 800mW Frequency - Transition 120MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 Long Body Supplier Device Package TO-92MOD |
Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type PNP Current - Collector (Ic) (Max) 50mA Voltage - Collector Emitter Breakdown (Max) 150V Vce Saturation (Max) @ Ib, Ic 800mV @ 1mA, 10A Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 10mA, 5V Power - Max 800mW Frequency - Transition 120MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 Long Body Supplier Device Package TO-92MOD |