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| Datasheet | 2SA1930,Q(J |
| File Size | 138.32 KB |
| Total Pages | 5 |
| Manufacturer | Toshiba Semiconductor and Storage |
| Website | http://www.toshiba.com/taec/ |
| Total Parts | This datasheet covers 7 part numbers |
| Associated Parts | 2SA1930,Q(J, 2SA1930,ONKQ(J, 2SA1930,LBS2DIAQ(J, 2SA1930,CKQ(J, 2SA1930(ONK,Q,M), 2SA1930(LBS2MATQ,M, 2SA1930(Q,M) |
| Description | TRANS PNP 2A 180V TO220-3, TRANS PNP 2A 180V TO220-3, TRANS PNP 2A 180V TO220-3, TRANS PNP 2A 180V TO220-3, TRANS PNP 2A 180V TO220-3 |
2SA1930,Q(J - Toshiba Semiconductor and Storage
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Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type PNP Current - Collector (Ic) (Max) 2A Voltage - Collector Emitter Breakdown (Max) 180V Vce Saturation (Max) @ Ib, Ic 1V @ 100mA, 1A Current - Collector Cutoff (Max) 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA, 5V Power - Max 2W Frequency - Transition 200MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Full Pack Supplier Device Package TO-220NIS |
Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type PNP Current - Collector (Ic) (Max) 2A Voltage - Collector Emitter Breakdown (Max) 180V Vce Saturation (Max) @ Ib, Ic 1V @ 100mA, 1A Current - Collector Cutoff (Max) 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA, 5V Power - Max 2W Frequency - Transition 200MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Full Pack Supplier Device Package TO-220NIS |
Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type PNP Current - Collector (Ic) (Max) 2A Voltage - Collector Emitter Breakdown (Max) 180V Vce Saturation (Max) @ Ib, Ic 1V @ 100mA, 1A Current - Collector Cutoff (Max) 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA, 5V Power - Max 2W Frequency - Transition 200MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Full Pack Supplier Device Package TO-220NIS |
Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type PNP Current - Collector (Ic) (Max) 2A Voltage - Collector Emitter Breakdown (Max) 180V Vce Saturation (Max) @ Ib, Ic 1V @ 100mA, 1A Current - Collector Cutoff (Max) 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA, 5V Power - Max 2W Frequency - Transition 200MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Full Pack Supplier Device Package TO-220NIS |
Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type PNP Current - Collector (Ic) (Max) 2A Voltage - Collector Emitter Breakdown (Max) 180V Vce Saturation (Max) @ Ib, Ic 1V @ 100mA, 1A Current - Collector Cutoff (Max) 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA, 5V Power - Max 2W Frequency - Transition 200MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Full Pack Supplier Device Package TO-220NIS |
Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type PNP Current - Collector (Ic) (Max) 2A Voltage - Collector Emitter Breakdown (Max) 180V Vce Saturation (Max) @ Ib, Ic 1V @ 100mA, 1A Current - Collector Cutoff (Max) 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA, 5V Power - Max 2W Frequency - Transition 200MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Full Pack Supplier Device Package TO-220NIS |
Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type PNP Current - Collector (Ic) (Max) 2A Voltage - Collector Emitter Breakdown (Max) 180V Vce Saturation (Max) @ Ib, Ic 1V @ 100mA, 1A Current - Collector Cutoff (Max) 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA, 5V Power - Max 2W Frequency - Transition 200MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Full Pack Supplier Device Package TO-220NIS |