Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | 2SA1869-Y,Q(J |
| File Size | 117.13 KB |
| Total Pages | 4 |
| Manufacturer | Toshiba Semiconductor and Storage |
| Website | http://www.toshiba.com/taec/ |
| Total Parts | This datasheet covers 4 part numbers |
| Associated Parts | 2SA1869-Y,Q(J, 2SA1869-Y,MTSAQ(J, 2SA1869-Y(Q,M), 2SA1869-Y(JKT,Q,M) |
| Description | TRANS PNP 3A 50V TO220-3, TRANS PNP 3A 50V TO220-3, TRANS PNP 3A 50V TO220-3, TRANS PNP 3A 50V TO220-3 |
2SA1869-Y,Q(J - Toshiba Semiconductor and Storage
The Products You May Be Interested In
 |
2SA1869-Y,Q(J | Toshiba Semiconductor and Storage | TRANS PNP 3A 50V TO220-3 | 133 More on Order |
 |
2SA1869-Y,MTSAQ(J | Toshiba Semiconductor and Storage | TRANS PNP 3A 50V TO220-3 | 449 More on Order |
 |
2SA1869-Y(Q,M) | Toshiba Semiconductor and Storage | TRANS PNP 3A 50V TO220-3 | 202 More on Order |
 |
2SA1869-Y(JKT,Q,M) | Toshiba Semiconductor and Storage | TRANS PNP 3A 50V TO220-3 | 485 More on Order |
URL Link
|
Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type PNP Current - Collector (Ic) (Max) 3A Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max) @ Ib, Ic 600mV @ 200mA, 2A Current - Collector Cutoff (Max) 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 500mA, 2V Power - Max 10W Frequency - Transition 100MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Full Pack Supplier Device Package TO-220NIS |
Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type PNP Current - Collector (Ic) (Max) 3A Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max) @ Ib, Ic 600mV @ 200mA, 2A Current - Collector Cutoff (Max) 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 500mA, 2V Power - Max 10W Frequency - Transition 100MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Full Pack Supplier Device Package TO-220NIS |
Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type PNP Current - Collector (Ic) (Max) 3A Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max) @ Ib, Ic 600mV @ 200mA, 2A Current - Collector Cutoff (Max) 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 500mA, 2V Power - Max 10W Frequency - Transition 100MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Full Pack Supplier Device Package TO-220NIS |
Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type PNP Current - Collector (Ic) (Max) 3A Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max) @ Ib, Ic 600mV @ 200mA, 2A Current - Collector Cutoff (Max) 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 500mA, 2V Power - Max 10W Frequency - Transition 100MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Full Pack Supplier Device Package TO-220NIS |