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2N6517RLRPG Datasheet

2N6517RLRPG Cover
Datasheet2N6517RLRPG
File Size116.97 KB
Total Pages7
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 10 part numbers
Associated Parts 2N6517RLRPG, 2N6515RLRMG, 2N6520BU, 2N6517CBU, 2N6517G, 2N6520RLRAG, 2N6517BU, 2N6517TA, 2N6520TA, 2N6517CTA
Description TRANS NPN 350V 0.5A TO-92, TRANS NPN 250V 0.5A TO-92, TRANS PNP 350V 0.5A TO-92, TRANS NPN 400V 0.5A TO-92, TRANS NPN 350V 0.5A TO92

2N6517RLRPG - ON Semiconductor

2N6517RLRPG Datasheet Page 1
2N6517RLRPG Datasheet Page 2
2N6517RLRPG Datasheet Page 3
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2N6517RLRPG Datasheet Page 7

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URL Link

2N6517RLRPG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

500mA

Voltage - Collector Emitter Breakdown (Max)

350V

Vce Saturation (Max) @ Ib, Ic

1V @ 5mA, 50mA

Current - Collector Cutoff (Max)

50nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

20 @ 50mA, 10V

Power - Max

625mW

Frequency - Transition

200MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

2N6515RLRMG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

500mA

Voltage - Collector Emitter Breakdown (Max)

250V

Vce Saturation (Max) @ Ib, Ic

1V @ 5mA, 50mA

Current - Collector Cutoff (Max)

50nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

45 @ 50mA, 10V

Power - Max

625mW

Frequency - Transition

200MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

2N6520BU

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

500mA

Voltage - Collector Emitter Breakdown (Max)

350V

Vce Saturation (Max) @ Ib, Ic

1V @ 5mA, 50mA

Current - Collector Cutoff (Max)

50nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

20 @ 50mA, 10V

Power - Max

625mW

Frequency - Transition

200MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

Supplier Device Package

TO-92-3

2N6517CBU

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

500mA

Voltage - Collector Emitter Breakdown (Max)

400V

Vce Saturation (Max) @ Ib, Ic

1V @ 5mA, 50mA

Current - Collector Cutoff (Max)

50nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

20 @ 50mA, 10V

Power - Max

625mW

Frequency - Transition

200MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

Supplier Device Package

TO-92-3

2N6517G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

500mA

Voltage - Collector Emitter Breakdown (Max)

350V

Vce Saturation (Max) @ Ib, Ic

1V @ 5mA, 50mA

Current - Collector Cutoff (Max)

50nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

20 @ 50mA, 10V

Power - Max

625mW

Frequency - Transition

200MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

Supplier Device Package

TO-92-3

2N6520RLRAG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

500mA

Voltage - Collector Emitter Breakdown (Max)

350V

Vce Saturation (Max) @ Ib, Ic

1V @ 5mA, 50mA

Current - Collector Cutoff (Max)

50nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

20 @ 50mA, 10V

Power - Max

625mW

Frequency - Transition

200MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

2N6517BU

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

500mA

Voltage - Collector Emitter Breakdown (Max)

350V

Vce Saturation (Max) @ Ib, Ic

1V @ 5mA, 50mA

Current - Collector Cutoff (Max)

50nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

20 @ 50mA, 10V

Power - Max

625mW

Frequency - Transition

200MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

Supplier Device Package

TO-92-3

2N6517TA

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

500mA

Voltage - Collector Emitter Breakdown (Max)

350V

Vce Saturation (Max) @ Ib, Ic

1V @ 5mA, 50mA

Current - Collector Cutoff (Max)

50nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

20 @ 50mA, 10V

Power - Max

625mW

Frequency - Transition

200MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

2N6520TA

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

500mA

Voltage - Collector Emitter Breakdown (Max)

350V

Vce Saturation (Max) @ Ib, Ic

1V @ 5mA, 50mA

Current - Collector Cutoff (Max)

50nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

20 @ 50mA, 10V

Power - Max

625mW

Frequency - Transition

200MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

2N6517CTA

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

500mA

Voltage - Collector Emitter Breakdown (Max)

400V

Vce Saturation (Max) @ Ib, Ic

1V @ 5mA, 50mA

Current - Collector Cutoff (Max)

50nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

20 @ 50mA, 10V

Power - Max

625mW

Frequency - Transition

200MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3