Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | 2N6028RLRPG |
| File Size | 77.42 KB |
| Total Pages | 6 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 9 part numbers |
| Associated Parts | 2N6028RLRPG, 2N6028RLRMG, 2N6028RLRP, 2N6028G, 2N6027G, 2N6028RLRAG, 2N6027RLRAG, 2N6028RLRA, 2N6027RLRA |
| Description | THYRISTOR PROG UNIJUNCT 40V TO92, THYRISTOR PROG UNIJUNCT 40V TO92, THYRISTOR PROG UNIJUNCT 40V TO92, THYRISTOR PROG UNIJUNCT 40V TO92, TRANS PROG UNIJUNCT 40V TO92 |
2N6028RLRPG - ON Semiconductor
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URL Link
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Manufacturer ON Semiconductor Series - Voltage 40V Power Dissipation (Max) 300mW Voltage - Output 11V Voltage - Offset (Vt) 600mV Current - Gate to Anode Leakage (Igao) 10nA Current - Valley (Iv) 25µA Current - Peak 150nA Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Manufacturer ON Semiconductor Series - Voltage 40V Power Dissipation (Max) 300mW Voltage - Output 11V Voltage - Offset (Vt) 600mV Current - Gate to Anode Leakage (Igao) 10nA Current - Valley (Iv) 25µA Current - Peak 150nA Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Manufacturer ON Semiconductor Series - Voltage 40V Power Dissipation (Max) 300mW Voltage - Output 11V Voltage - Offset (Vt) 600mV Current - Gate to Anode Leakage (Igao) 10nA Current - Valley (Iv) 25µA Current - Peak 150nA Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Manufacturer ON Semiconductor Series - Voltage 40V Power Dissipation (Max) 300mW Voltage - Output 11V Voltage - Offset (Vt) 600mV Current - Gate to Anode Leakage (Igao) 10nA Current - Valley (Iv) 25µA Current - Peak 150nA Package / Case TO-226-3, TO-92-3 (TO-226AA) |
Manufacturer ON Semiconductor Series - Voltage 40V Power Dissipation (Max) 300mW Voltage - Output 11V Voltage - Offset (Vt) 1.6V Current - Gate to Anode Leakage (Igao) 10nA Current - Valley (Iv) 50µA Current - Peak 2µA Package / Case TO-226-3, TO-92-3 (TO-226AA) |
Manufacturer ON Semiconductor Series - Voltage 40V Power Dissipation (Max) 300mW Voltage - Output 11V Voltage - Offset (Vt) 600mV Current - Gate to Anode Leakage (Igao) 10nA Current - Valley (Iv) 25µA Current - Peak 150nA Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Manufacturer ON Semiconductor Series - Voltage 40V Power Dissipation (Max) 300mW Voltage - Output 11V Voltage - Offset (Vt) 1.6V Current - Gate to Anode Leakage (Igao) 10nA Current - Valley (Iv) 50µA Current - Peak 2µA Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Manufacturer ON Semiconductor Series - Voltage 40V Power Dissipation (Max) 300mW Voltage - Output 11V Voltage - Offset (Vt) 600mV Current - Gate to Anode Leakage (Igao) 10nA Current - Valley (Iv) 25µA Current - Peak 150nA Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Manufacturer ON Semiconductor Series - Voltage 40V Power Dissipation (Max) 300mW Voltage - Output 11V Voltage - Offset (Vt) 1.6V Current - Gate to Anode Leakage (Igao) 10nA Current - Valley (Iv) 50µA Current - Peak 2µA Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |