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2N5401 Datasheet

2N5401 Cover
Datasheet2N5401
File Size83.46 KB
Total Pages6
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 8 part numbers
Associated Parts 2N5401, 2N5401ZL1G, 2N5401ZL1, 2N5401RLRMG, 2N5401RLRM, 2N5401RL1G, 2N5401RL1, 2N5401RLRA
Description TRANS PNP 150V 0.6A TO-92, TRANS PNP 150V 0.6A TO-92, TRANS PNP 150V 0.6A TO-92, TRANS PNP 150V 0.6A TO-92, TRANS PNP 150V 0.6A TO-92

2N5401 - ON Semiconductor

2N5401 Datasheet Page 1
2N5401 Datasheet Page 2
2N5401 Datasheet Page 3
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2N5401 Datasheet Page 5
2N5401 Datasheet Page 6

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2N5401RL1 2N5401RL1 ON Semiconductor TRANS PNP 150V 0.6A TO-92 206

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URL Link

2N5401

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

600mA

Voltage - Collector Emitter Breakdown (Max)

150V

Vce Saturation (Max) @ Ib, Ic

500mV @ 5mA, 50mA

Current - Collector Cutoff (Max)

50nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

60 @ 10mA, 5V

Power - Max

625mW

Frequency - Transition

300MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

Supplier Device Package

TO-92-3

2N5401ZL1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

600mA

Voltage - Collector Emitter Breakdown (Max)

150V

Vce Saturation (Max) @ Ib, Ic

500mV @ 5mA, 50mA

Current - Collector Cutoff (Max)

50nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

60 @ 10mA, 5V

Power - Max

625mW

Frequency - Transition

300MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

2N5401ZL1

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

600mA

Voltage - Collector Emitter Breakdown (Max)

150V

Vce Saturation (Max) @ Ib, Ic

500mV @ 5mA, 50mA

Current - Collector Cutoff (Max)

50nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

60 @ 10mA, 5V

Power - Max

625mW

Frequency - Transition

300MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

2N5401RLRMG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

600mA

Voltage - Collector Emitter Breakdown (Max)

150V

Vce Saturation (Max) @ Ib, Ic

500mV @ 5mA, 50mA

Current - Collector Cutoff (Max)

50nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

60 @ 10mA, 5V

Power - Max

625mW

Frequency - Transition

300MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

2N5401RLRM

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

600mA

Voltage - Collector Emitter Breakdown (Max)

150V

Vce Saturation (Max) @ Ib, Ic

500mV @ 5mA, 50mA

Current - Collector Cutoff (Max)

50nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

60 @ 10mA, 5V

Power - Max

625mW

Frequency - Transition

300MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

2N5401RL1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

600mA

Voltage - Collector Emitter Breakdown (Max)

150V

Vce Saturation (Max) @ Ib, Ic

500mV @ 5mA, 50mA

Current - Collector Cutoff (Max)

50nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

60 @ 10mA, 5V

Power - Max

625mW

Frequency - Transition

300MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

2N5401RL1

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

600mA

Voltage - Collector Emitter Breakdown (Max)

150V

Vce Saturation (Max) @ Ib, Ic

500mV @ 5mA, 50mA

Current - Collector Cutoff (Max)

50nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

60 @ 10mA, 5V

Power - Max

625mW

Frequency - Transition

300MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

2N5401RLRA

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

600mA

Voltage - Collector Emitter Breakdown (Max)

150V

Vce Saturation (Max) @ Ib, Ic

500mV @ 5mA, 50mA

Current - Collector Cutoff (Max)

50nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

60 @ 10mA, 5V

Power - Max

625mW

Frequency - Transition

300MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3